The global magneto resistive RAM (MRAM) market is
expected to reach USD 4.80 billion by 2025, according to a new study by Grand
View Research, Inc. Non-volatile memories, such as MRAM and Resistive random
Access Memory (RRAM/ReRAM), are expected to replace the existing volatile
memories such as Dynamic Random Access Memory (DRAM) and Static Random-Access
Memory (static RAM or SRAM). The replacement would be possible due to different
benefits offered by the advance non-volatile memories. The existing flash
memories are facing technological limits; and their further advancements are
expected to increase their costs, thus, leading to the invention of
non-volatile memories that are capable of avoiding data loss on power
discharge.
The standalone markets, such as
wearables, embedded Multipoint Control Unit (MCU)s, smart cards, and
storage class memories for enterprise storage, are expected to offer immense
opportunities to the market.
The first generation MRAM and
second generation Spin-Transfer Torque MRAM (STT-MRAM) are expected to replace
traditional DRAMs and SRAMs. Initially, the prices associated with these
memories are expected to be high, which would reduce with the increasing rates
of developments.
Moreover, the increasing demand
of these memories is predicted to promote the demand for equipment, used in
their manufacturing. The manufacturing of these memories require specialized
fabrication equipment, similar to those used in magnetic read sensors. Thus,
promoting the growth of capital equipment required for manufacturing of
non-volatile memories equipment.
The market may face challenges
due to its complex structure and high costs of manufacturing of memories.
However, these challenges can be circumvented by technological advancements and
increased production.
Browse full research report on Global
Magneto Resistive RAM (MRAM) Market: http://www.grandviewresearch.com/industry-analysis/magneto-resistive-ram-random-access-memory-mram-market
Further key findings from
the study suggest:
- The North American region dominated the market, accounting for more than 36% of the total market revenue, owing to the presence of leading players and growing R&D activities
- STT-MRAM is expected to maintain market dominance due to its wide application, higher performance, thermal stability, and greater compatibility
- The Asia Pacific region is predicted to emerge as the fastest-growing market due to the increased penetration of cloud computing and improvements in the present infrastructures of data centers, in developing nations
- Strategic partnerships accompanied, by the increasing innovation and research & development activities, are being observed in the industry
- The prominent vendors operating in the market include Avalanche Technology, Inc., Everspin Technologies, Inc., Spin Transfer Technologies, Toshiba Corporation, and Crocus Nano Electronics LLC
Browse more reports of this category by Grand View
Research: http://www.grandviewresearch.com/industry/emerging-and-next-generation-technologies
Grand View Research has segmented the global Magneto
Resistive RAM (MRAM) market based on type, application, and region:
MRAM Type Outlook (Revenue, USD Million; 2014- 2025)
- Toggle MRAM
- Spin-Transfer Torque MRAM (STT-MRAM)
MRAM Application Outlook (Revenue, USD Million; 2014
- 2025)
- Consumer Electronics
- Robotics
- Automotive
- Enterprise Storage
- Aerospace & Defense
- Others
MRAM Regional Outlook (Revenue, USD Million; 2014 -
2025)
- North America
- Europe
- Russia
- Asia Pacific
- RoW
About Grand View Research
Grand View Research, Inc. is a
U.S. based market research and consulting company, registered in the State of
California and headquartered in San Francisco. The company provides
syndicated research reports, customized research reports, and consulting
services. To help clients make informed business decisions, we offer market
intelligence studies ensuring relevant and fact-based research across a range
of industries, from technology to chemicals, materials and healthcare.
For more information: www.grandviewresearch.com
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